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  technical data npn medium power silicon transistor qualified per mil - prf - 19500/581 devices qualified level 2n4237 2n4238 2N4239 jantx jantxv maximum ratings (t a = 25 0 c unless otherwise noted) ratings symbol 2n4237 2n4238 2N4239 units collector - emitter voltage v ceo 40 60 80 vdc collector - base voltage v cbo 50 80 100 vdc emitter - base voltage v ebo 6.0 vdc collector current i c 1.0 adc base current i b 0.5 adc total power dissipation @ t a = +25 0 c (1) @ t c = +25 0 c (2) p t 1.0 6.0 w w operating & storage temperature range t op , t stg - 65 to +200 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 29 0 c/w 1) derate linearly 5.7 mw/ 0 c for t a > +25 0 c 2) derate linearly 34 mw/ 0 c for t c > +25 0 c *see appendix a for package outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - emitter breakdown voltage i c = 10 0 madc 2n4237 2n4238 2N4239 v ( br ) ceo 50 80 100 vdc emitter - base cutoff current v eb = 6.0 vdc i ebo 0.5 madc collector - emi tter cutoff current v ce = 90 vdc, v be = 1.5 vdc v ce = 50 vdc 2n4237 v ce = 80 vdc 2n4238 v ce = 10 vdc 2N4239 i cex 100 100 100 nadc collector - base cutoff current v ce = 50 vdc 2n4237 v ce = 80 vdc 2n4238 v ce = 10 vdc 2N4239 i cbo 100 100 100 nadc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2 to - 39*
2n4237, 4238, 4239 jan, jantx, jantxv electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward current transfer ratio i c = 250 madc, v ce = 1.0 vdc i c = 500 madc, v ce = 1.0 vdc h fe 30 30 150 collector - emitter saturation voltage i c = 500 adc, i b = 50 adc i c = 1.0 adc, i b = 0.1 adc v ce(sat) 0.3 0.6 vdc base - emitter saturation voltage i c = 500 adc, i b = 50 adc i c = 1.0 adc, i b = 0.1 adc v be(sat) 1.0 1.5 vdc dynamic characteristics magnitude of common emitter small - signal short circuit forward - current transfer ratio i c = 100 madc, v ce = 10 vdc, f = 10 mhz ? h fe ? 3.0 output capacitance v cb = 10 vdc, i e = 0 , f = 100 khz c obo 100 pf safe operating area dc tests t c = +25 0 c, 1 cycle, t 3 0.5 s test 1 v ce = 6.0 vdc, i c = 1.0 adc test 2 v ce = 12 vdc, i c = 500 madc test 3 v ce = 30 vdc, i c = 166 madc 2n4237 v ce = 50 vdc, i c = 100 madc 2n4238 v ce = 70 vdc, i c = 71 madc 2N4239 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2


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